Black silicon carbide is a key raw refractory material for high-temperature furnaces, kiln furniture, and smelting linings. It provides excellent heat resistance, slag corrosion resistance, thermal shock resistance and wear resistance, widely used in steel, iron, aluminum and ceramic industrial kilns.

Black Silicon Carbide (Black SiC), with the chemical formula SiC, is a synthetic ceramic material made by fusing quartz sand and petroleum coke at ~2200 °C. It features Mohs hardness ~9.2, high temperature stability (melting point ~2700 °C), excellent thermal shock resistance, chemical inertness, and wear resistance. Cost-effective and tough, it is widely applied in refractories for high-temperature furnaces, iron and steel troughs, abrasives (grinding wheels, sandblasting), metallurgical additives, and wear-resistant coatings, differing from green SiC by its lower cost and broader industrial use.

Green silicon carbide polishing powder remains the workhorse abrasive for hard material processing where balance between removal rate, surface quality, and cost-effectiveness is paramount.

Advantages of Black SiC Micropowder Black silicon carbide micropowder (α-SiC, SiC ≥98.5%) is hexagonal black crystalline fine powder (0.5–60 μm). Compared with green SiC, fused alumina and other abrasives, it has comprehensive superior properties: –Excellent Mechanical Abrasive Performance Ultra-high hardness: Mohs hardness 9.15–9.2, sharper cutting edges than white/brown fused alumina, fast stock removal. High toughness

Green silicon carbide (also written as Green SiC) is a high-purity synthetic abrasive material produced by high-temperature electric furnace smelting from high‑quality quartz sand, petroleum coke, and industrial salt. It appears as a green crystalline powder or block with sharp, angular particles.

Mix high-purity GC micro powder with deionized water or PEG carrier liquid to form suspended polishing slurry. Under pressure between lapping plate and silicon wafer, GC particles roll and micro-cut the silicon surface to evenly strip uneven peaks, realizing flattening without deep crystal lattice destruction.