Key Properties
- Hardness: Mohs hardness ~9.2, second only to diamond and cubic boron nitride (CBN)
- High purity: Low metallic impurities, low free silicon, and low graphite content
- Chemical inertness: Stable in acids and alkalis; does not easily react with metals, ceramics, or semiconductors
- High thermal conductivity: Quickly dissipates heat during grinding and lapping
- Self‑sharpening: Particles fracture to expose new sharp edges during processing
- Wear resistance: Long service life and stable processing performance
Advantages of Green Silicon Carbide (SiC) Lapping Powder
Extreme Hardness & Sharpness
Green SiC has a high hardness (Mohs ~9.2), only lower than diamond and CBN. It delivers strong cutting ability for hard, brittle materials like ceramics, glass, carbides, sapphires, and semiconductors.
Excellent Self-Sharpening
Particles fracture continuously during lapping, creating fresh sharp edges. It maintains stable cutting efficiency without dulling or glazing, ensuring consistent material removal.
High Chemical Purity & Inertness
Low impurity content and strong chemical resistance prevent reactions with workpieces. Ideal for precision components in optics, electronics, and semiconductors that require contamination-free surfaces.
Good Thermal Conductivity
Rapidly dissipates heat generated during lapping, avoiding thermal deformation, burning, or thermal stress on delicate and high-precision parts.
Narrow Particle Size Distribution
Available in fine and ultra-fine grades with uniform particle size. Enables smooth, scratch-free surfaces with high flatness and low surface roughness (Ra at nanometer level).
Cost-Effective Performance
Provides performance close to diamond abrasives at a much lower cost, making it economical for industrial precision lapping and polishing.
Wide Compatibility
Suitable for both dry and wet lapping processes, compatible with various laps and binders, and widely used in optical parts, wafers, watch parts, carbides, and gemstones.