Mix high-purity GC micro powder with deionized water or PEG carrier liquid to form suspended polishing slurry. Under pressure between lapping plate and silicon wafer, GC particles roll and micro-cut the silicon surface to evenly strip uneven peaks, realizing flattening without deep crystal lattice destruction.

Black Silicon Carbide (Black SiC), with the chemical formula SiC, is a synthetic ceramic material made by fusing quartz sand and petroleum coke at ~2200 °C. It features Mohs hardness ~9.2, high temperature stability (melting point ~2700 °C), excellent thermal shock resistance, chemical inertness, and wear resistance. Cost-effective and tough, it is widely applied in refractories for high-temperature furnaces, iron and steel troughs, abrasives (grinding wheels, sandblasting), metallurgical additives, and wear-resistant coatings, differing from green SiC by its lower cost and broader industrial use.

Green silicon carbide powder features high hardness, uniform particle size and great chemical stability. It provides high polishing efficiency, ultra-smooth wafer surface and low subsurface damage, being an ideal abrasive for silicon wafer polishing.