Green silicon carbide abrasives high purity, large crystalline silicon carbide raw materials, to ensure the excellent cutting performance and stable physical state of silicon carbide cutting micro powder.
| TYPICAL CHEMICAL ANALYSIS | |
| SiC | ≥99.05% |
| SiO2 | ≤0.20% |
| F,Si | ≤0.03% |
| Fe2O3 | ≤0.10% |
| F.C | ≤0.04% |
| TYPICAL PHISICAL PROPERTIES | |
| Hardness: | Mohs：9.5 |
| Melting Point: | Sublimes at 2600 ℃ |
| Maximum service temperature: | 1900℃ |
| Specific Gravity: | 3.20-3.25g/cm3 |
| Bulk density(LPD): | 1.2-1.6 g/cm3 |
| Color: | Green |
| Particle shape: | Hexagonal |
| Sizes： | |
| Micropowder： JIS:240# 280# 320# 360# 400# 500# 600# 700# 800# 1000# 1200# 1500# 2000# 2500# 3000# 4000# 6000# 8000# 10000# FEPA： F230 F240 F320 F360 F400 F500 F600 F800 F1000 F1200 F1500 F2000 | |
1. Excellent Polishing Performance
- High hardness and sharp grain shape deliver superior surface finish on silicon wafers.
- Effectively remove surface defects, scratches and uneven layers.
2. High Cutting Efficiency
- Strong grinding capacity, which greatly improves polishing speed and production efficiency.
- Stable abrasion performance with low consumption.
3. Uniform Particle Size
- Narrow particle distribution ensures consistent polishing effect across all wafers.
- Avoid over-polishing or local surface damage.
4. Good Chemical Stability
- Resistant to high temperature and chemical corrosion in polishing slurry.
- Low chemical reaction with silicon substrates, no contamination.
5. Low Surface Damage
- Fine and regular grains cause minimal subsurface damage to silicon wafers.
- Ideal for precision polishing of semiconductor-grade silicon wafers.
6. Cost-Effective
- Long service life and stable quality, reduce overall production cost.