Green silicon carbide has been used as a material of choice in high-performance industrial applications. Optimization in production and raw materials has led to the application of SiC in new and growing industries such as photovoltaic, semiconductor and filtration.
| TYPICAL CHEMICAL ANALYSIS | |
| SiC | ≥99.05% |
| SiO2 | ≤0.20% |
| F,Si | ≤0.03% |
| Fe2O3 | ≤0.10% |
| F.C | ≤0.04% |
| TYPICAL PHISICAL PROPERTIES | |
| Hardness: | Mohs：9.5 |
| Melting Point: | Sublimes at 2600 ℃ |
| Maximum service temperature: | 1900℃ |
| Specific Gravity: | 3.20-3.25g/cm3 |
| Bulk density(LPD): | 1.2-1.6 g/cm3 |
| Color: | Green |
| Particle shape: | Hexagonal |
| Available Size： | |
| Grit：4# 5# 6# 8# 10# 12# 14# 16# 20# 22# 24# 30# 36# 40# 46# 54# 60# 70# 80# 10# 12# 14# 16# 20# 22# 24# 30# 36# 40# 46# 54# 60# 70# 80# 90# 100# 120# 150# 180# 220# Micropowder： JIS:240# 280# 320# 360# 400# 500# 600# 700# 800# 1000# 1200# 1500# 2000# 2500# 3000# 4000# 6000# 8000# 10000# FEPA： F230 F240 F320 F360 F400 F500 F600 F800 F1000 F1200 F1500 F2000 | |
Silicon carbide (SiC) is a growing alternative to silicon-based electronics components, especially in wide bandgap applications. The material offers a unique combination of greater power efficiency, smaller size, lighter weight and lower overall cost of the systems. Now, the demand for high- purity silicon carbide powders for the electronics and semiconductor industry is growing.