Introduction of Green silicon carbide:
Green silicon carbide (Green SiC, chemical formula SiC) is a high‑purity, synthetic crystalline abrasive, known for its extreme hardness, sharp cutting edges, and excellent chemical/thermal stability. It is the premium grade among SiC materials, often called the “green diamond” of industrial abrasives.
| Property | Green Silicon Carbide |
|---|---|
| Chemical formula | SiC |
| Purity | 98.5–99.5% SiC (high grade ≥99.9%) |
| Mohs hardness | 9.2–9.5 (near diamond) |
| Microhardness | 3200–3600 kg/mm² |
| Density | 3.22 g/cm³ |
| Thermal conductivity | 80–140 W/m·K (excellent heat dissipation) |
| Thermal expansion | Low |
| Melting point | ~2700°C |
| Chemical stability | Inert to water, acids, alkalis, and most solvents |
| Particle shape | Sharp, blocky, polyhedral; good self‑sharpening |
Advantages of the Green Silicon Carbide for Wafer Lapping
- Superior Hardness & Cutting PerformanceWith a Mohs hardness of 9.2–9.5, green silicon carbide is much harder than monocrystalline silicon. It features sharp particle edges and excellent self-sharpening ability, delivering high material removal rate to efficiently eliminate surface marks and damaged layers on wafers.
- Uniform Particle Size & Excellent Surface QualityStrictly graded fine powder has a narrow particle size distribution and low agglomeration. It produces fine, shallow scratches instead of deep cuts, chipping or pits, effectively controlling subsurface damage and guaranteeing consistent lapping results.
- Excellent Chemical & Thermal StabilityChemically inert against water, common lapping slurries and acid/alkaline additives, it will not corrode silicon wafers. It maintains stable hardness and particle shape under frictional heat, and its good thermal conductivity dissipates heat quickly to avoid wafer thermal deformation.
- High Purity for Semiconductor ApplicationsLower content of heavy metal and impurities compared to black silicon carbide. It causes no electrical contamination, fully meeting the high-purity requirements for semiconductor and photovoltaic wafer production.
- Good Wear Resistance & Cost-EfficiencyLow abrasion loss extends service life. It is far more cost-effective than diamond powder while retaining reliable lapping performance, ideal for mass production. The powder suspends well in slurry, reducing fluid replacement frequency.
- Moderate ToughnessBalanced brittleness and toughness prevent excessive fine debris from embedding into wafer surfaces, simplifying subsequent cleaning processes. It is compatible with various lapping pads and equipment for single/double-sided lapping, edge chamfering and other processes.