Green Silicon Carbide Micropowder for Wafer Polishing

Green silicon carbide (SiC) powder used in semiconductor wafer polishing is a key material. It is widely used in precision polishing processes due to its high hardness, excellent chemical stability and thermal stability.

1. Characteristics of green silicon carbide

—High hardness (Mohs hardness 9.2): second only to diamond and cubic boron nitride, suitable for processing hard materials (such as silicon, silicon carbide wafers).

—Chemical inertness: does not react with acids and alkalis at room temperature to avoid contamination of the wafer surface.

—Thermal stability: can still maintain performance at high temperatures, suitable for high-speed polishing.

–Sharp particle shape: provides efficient cutting ability, but the particle uniformity needs to be controlled to avoid scratches.

2. Application in semiconductor polishing

—Rough polishing stage: used to remove larger defects or processing traces on the wafer surface (such as damaged layers after slicing and grinding).

—Silicon carbide (SiC) wafer polishing: Green silicon carbide matches the hardness of SiC wafer materials to reduce surface damage.

—Auxiliary applications: used for polishing hard and brittle materials such as sapphire substrates and optical glass.

3. Key quality requirements
—Particle size distribution: needs to be highly uniform (such as D50 1–5μm) to avoid scratches caused by large particles.

—Purity: high purity (≥99.9%) to reduce contamination by metal impurities (such as Fe, Al).

—Particle morphology: needs to be spherical or equi-area to reduce surface roughness.

—Suspension: stable dispersion in the polishing liquid to prevent sedimentation.